Імпедансна модель для наноелектронних структур

R. S. Akhmedov; E. A. Nelin

doi:10.20535/RADAP.2007.34.102-105

Impedance model for nanostructures

Authors

R. S. Akhmedov National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
E. A. Nelin National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev http://orcid.org/0000-0002-8208-9664

DOI:

https://doi.org/10.20535/RADAP.2007.34.102-105

Keywords:

nanoelectronic quantum-mechanical structures, impedance model

Abstract

The application of the impedance model for nanoelectronic quantum-mechanical structures modelling is described. Characteristics illustrating the efficiency of the model are presented.

Author Biographies

R. S. Akhmedov, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

Ахмедов Р.С., магістрант радіотехнічного факультету

E. A. Nelin, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

Нелін Є.А., д.т.н., проф. кафедри конструювання та виробництва радіоапаратури

References

Нелин Е.А. Наноэлектронные устройства на основе сверхрешеток // Вестник Киевского политехнического института (радиотехника). 1993. Вип.30. C. 3―15.

Khondker A. N., Khan M. R., Anwar A. F. M. Transmission line analogy of resonance tunneling phenomena: The generalized іmpedance concept // J.Appl.Phys. 1988. V.63, N. 10. P. 5191–5193.

Ando Y., Itoh T. Calculation of transmission tunneling current across arbitrary potential barriers // J.Appl.Phys. 1987. V. 61, N 4. P. 1497―1502.

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How to Cite

Ахмедов, Р. and Нелін, Є. (2007) “Impedance model for nanostructures”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(34), pp. 102-105. doi: 10.20535/RADAP.2007.34.102-105.

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Issue

No. 34 (2007)

Section

Functional Electronics. Micro- and Nanoelectronic Technology

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