ОКСАНИЧ, А.; ПРИТЧИН, С.; ТЕРБАН, В. Development of devices and systems of growth of gallium arsenide ingots for micro, nano electronics and photovoltaics. Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, [S. l.], n. 54, p. 136-143, 2013. DOI: 10.20535/RADAP.2013.54.136-143. Disponível em: http://radap.kpi.ua/radiotechnique/article/view/680. Acesso em: 27 nov. 2021.