Метод расширения диапазона рабочих частот микросхемы SiGe БиКМОП СВЧ регулируемого усилитель


Аннотация

Предлагается метод расширения диапазона рабочих частот аналоговой микросхемы регулируемого усилителя (РУ) по SiGe БиКМОП технологии с проектными нормами 0,18 мкм. Разработанный РУ имеет линейную (в дБ) характеристику управления. Рассматривается архитектура РУ и приводятся результаты его проектирования. Описаны свойства двух модификаций микросхемы РУ - с классической коррекцией амплитудно-частотной характеристики и с цепью взаимной компенсации паразитной емкости в высокоимпедансном узле. Показано, что второе схемотехническое решение позволяет увеличить верхнюю граничную частоту РУ в 1,8-2 раза.

Библиографическое описание

 
ГОСТ 7.1:2006 Транслитерация (формат Harvard)
 
Savchenko, E. M. The Method of Bandwidth Extension of SiGe BiCMOS Microwave Variable-Gain Amplifier Integrated Circuit / Savchenko, E. M., Budiakov, A. S., Budiakov, P. S., Prokopenko, N. N. // Visn. NTUU KPI, Ser. Radioteh. radioaparatobuduv. – 2017. – № 69. – с. 5-10. Savchenko, E. M., Budiakov, A. S., Budiakov, P. S., Prokopenko, N. N. (2017) The Method of Bandwidth Extension of SiGe BiCMOS Microwave Variable-Gain Amplifier Integrated Circuit. Visn. NTUU KPI, Ser. Radioteh. radioaparatobuduv., no. 69, pp. 5-10.
 

Полный текст:


Литература


Gan Jun-Ning, Zhang Wan-Rong, Me Hong-yun and Jin Dong-yue (2008) A High dynamic range SiGe HBT variable gain amplifier for WCDMA applications. Proceedings 2008 6th IEEE International Conference on Industrial Informatics, Daejeon, DOI: 10.1109/INDIN.2008.4618173.

Koh Kwang-Jin, Youn Yong-Sik, H. Yu. (2002) A gain boosting method at RF frequency using active feedback and its application to RF variable gain amplifier (VGA). IEEE International Symposium on Circuits and Systems, ISCAS 2002, Vol. 3. DOI: 10.1109/ISCAS.2002.1010167.

Spiridon S. and Op't Eynde F. (2005) Low power CMOS fully differential variable-gain amplifier. Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International, Vol. 2, Sinaia, pp. 383-386. DOI: 10.1109/SMICND.2005.1558806

Samadi R. and Karsilayan A.I. (2007) Uniform Design of Multi-Peak Bandwidth Enhancement Technique for Multistage Amplifiers. IEEE Trans. Circuits Syst. I Regul. Pap., Vol. 54, No 7, pp. 1489–1499. DOI: 10.1109/tcsi.2007.899615

Vadipour M. (1993) Capacitive feedback technique for wideband amplifiers. IEEE J. Solid State Circuits, Vol. 28, No 1, pp. 90–92. DOI: 10.1109/4.179208

Wakimoto T. and Akazawa Y. (1990) A low-power wide-band amplifier using a new parasitic capacitance compensation technique. IEEE J. Solid-State Circuits, Vol. 25, No 1, pp. 200–206. DOI: 10.1109/4.50304

Centurelli F., Luzzi R., Olivieri M. et al. (2002) A bootstrap technique for wideband amplifiers. IEEE Trans. Circuits Syst. I Fundam. Theory Appl., Vol. 49, No 10, pp. 1474-1479. DOI: 10.1109/tcsi.2002.803359

Shekhar S., Walling J. S. and Allstot D. J. (2006) Bandwidth Extension Techniques for CMOS Amplifiers. IEEE Journal of Solid-State Circuits, Vol. 41, No. 11, pp. 2424-2439, DOI: 10.1109/JSSC.2006.883336

Chang C. h. and Onabajo M. (2014) Instrumentation amplifier input capacitance cancellation for biopotential and bioimpedance measurements. 2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS), College Station, TX, pp. 539-542. doi: 10.1109/MWSCAS.2014.6908471

Worapishet A., Demosthenous A. and Liu X. (2010) A CMOS Instrumentation Amplifier With 90-dB CMRR at 2-MHz Using Capacitive Neutralization: Analysis, Design Considerations, and Implementation. IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 58, No. 4, pp. 699-710, DOI: 10.1109/TCSI.2010.2078850

Prokopenko N.N., Budyakov P.S. and Pakhomov I.V. (2014) Circuit design of classical stages with bandwidth enhancement technique. Proceedings 6th International Conference on Computational Intelligence, Communication Systems and Networks (CICSyN2014). Tetovo, Macedonia Republic, pp. 202-206. doi: 10.1109/CICSyN.2014.50

Prokopenko N.N., Serebryakov A.I. and Budyakov P.S. (2010) Perspective high-frequency correction in differential and broadband amplifiers. Circuits and Systems for Communications (ECCSC), 2010 5th European Conference on, Belgrade, Serbia, pp. 135-139

Prokopenko N.N., Gaiduk А.R., Budyakov P.S. and Butyrlagin N.V. (2013) The Synthesis of the Correction Circuit of the High Speed Sensors of the Physical Quantities and Current-Voltage Converters with the Parasitic Capacitance. Design & Test Symposium (EWDTS), 2014 East-West, pp. 161–164. DOI: 10.1109/ewdts.2014.7027047

Prokopenko N.N., Serebryakov A.I., Budyakov P.S. (2013) The methods of the bandwidth enhancement of the flash ADC with the differential input. The International IEEE Conference on Microwaves, Communications, Antennas and Electronic Systems (IEEE COMCAS 2013), Israel, DOI: 10.1109/COMCAS.2013.6685296.

Prokopenko N.N., Budyakov P.S. and Butyrlagin N.V. (2013) The high-frequency correction circuit for resistive voltage dividers with capacitive load. 11th East-West Design & Test Symposium (EWDTS 2013), Rostov-on-Don, Russia, pp. 154–157.

Prokopenko N.N., Butyrlagin N.V., Pakhomov I.V. and Gaiduk A.R. (2015) The Synthesis of Compensation Circuits of Parasitic Capacitances of the Output Circuit of Classical Broadband Amplifiers of Signal and Telecommunications Systems. 2015 International Siberian Conference on Control and Communications (SIBCON’2015), pp.1-7, DOI: 10.1109/SIBCON.2015.7147181

Dvornikov О. V., Tchekhovski V. А., Dziatlau V. L. and Prokopenko N. N. (2016) The main characteristics of SiGe HBTs at low temperatures. Visn. NTUU KPI, Ser. Radioteh. radioaparatobuduv., no. 66, pp. 87-96.

Weinreb S., Bardin J.C. and Mani H. (2007) Design of Cryogenic SiGe Low-Noise Amplifiers. IEEE Trans. on Microwave Theory and Techniques, Vol. 55, No. 11, pp.~2306-2312. DOI: 10.1109/tmtt.2007.907729

Liang Q. et al. (2006) Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs. Solid-State Electronics, Vol. 50, Iss. 6, pp. 964–972. DOI: 10.1016/j.sse.2006.04.027

Florian E.T. et al. (2011) Radiation Hardness Evaluation of a 0.25 μm SiGe BiCMOS Technology with LDMOS Module. Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on, pp. 881-888. DOI: 10.1109/RADECS.2011.6131321.

Cressler J. D. (2006) SiGe Integrated Electronics for Extreme Environments. 4th International Planetary Probe Workshop, Pasadena, CA.






Лицензия Creative Commons
Это произведение доступно по лицензии Creative Commons «Attribution» («Атрибуция») 4.0 Всемирная.