Simulation of an operational amplifier based on MOS transistors

Authors

  • I. V. Rozdobudko National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
  • K. V. Dotsenko National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

DOI:

https://doi.org/10.20535/RADAP.2010.42.94-98

Keywords:

operational amplifier, MOS transistor model

Abstract

The analysis of model's parameters of MOS transistor was carried out; the job contains results of simulation of an operational amplifier.

Author Biographies

I. V. Rozdobudko, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

Роздобудько І.В.

K. V. Dotsenko, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

References

Chenming Hu, Weidong Liu, et al., “BSIM3v3.2.2 MOSFET Model. Users’ manual”, UC Berkley, 1999. 210 p.

Gray, Paul R., et al. Analysis and design of analog integrated circuits. N.Y.: John Wiley & Sons, Inc., 2001. 875 p.

R. Jacob Backer, Harry W. Li, David E. Boyce. CMOS Circuit Design, Layout and Simulation. New York : IEEE Press ,inc., 1998. 899 p.

Phillip E. Allen, Douglas R. Holberg.CMOS Analog Circuit Design, Second Edition. New York. Oxford University Press, Inc., 2002. 701 p.

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How to Cite

Роздобудько, І. and Доценко, К. (2010) “Simulation of an operational amplifier based on MOS transistors”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(42), pp. 94-98. doi: 10.20535/RADAP.2010.42.94-98.

Issue

No. 42 (2010)

Section

Designing of Radio Equipment

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