Оксанич, А., Притчин, С. and Тербан, В. 2013. Development of devices and systems of growth of gallium arsenide ingots for micro, nano electronics and photovoltaics. Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia. 54 (Sep. 2013), 136-143. DOI:https://doi.org/10.20535/RADAP.2013.54.136-143.