Оксанич, А., Притчин, С., & Тербан, В. (2013). Development of devices and systems of growth of gallium arsenide ingots for micro, nano electronics and photovoltaics. Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, (54), 136-143. https://doi.org/10.20535/RADAP.2013.54.136-143