БИТКІН , С. В.; КРИТСЬКА , Т. В. Radiation Resistance of Test npn IC Transistors with Dielectric Insulation, Manufactured on Silicon, Isovalently Doped with Germanium (SiGe). Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, [S. l.], n. 91, p. 72-78, 2023. DOI: 10.20535/RADAP.2023.91.72-78. Disponível em: https://radap.kpi.ua/radiotechnique/article/view/1752. Acesso em: 26 apr. 2024.