Биткін , С. В., and Т. В. Критська. “Radiation Resistance of Test Npn IC Transistors With Dielectric Insulation, Manufactured on Silicon, Isovalently Doped With Germanium (SiGe)”. Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, no. 91 (March 30, 2023): 72-78. Accessed April 26, 2024. https://radap.kpi.ua/radiotechnique/article/view/1752.