Protection of information in RAM on CMOS ICs Authors S. A. Dovbysh Kiev Politechnic Institute, Kiev Keywords: information security, RAM, CMOS circuits, storage device Abstract The proposed scheme, which provides safety information in CMOS circuits CL Failure of the supply voltage. Using the scheme increases the reliability of storage devices. Author Biography S. A. Dovbysh, Kiev Politechnic Institute, Kiev Dovbysh S.A. Downloads PDF (Ukrainian) Issue No. 30 (1993) Section Articles
