The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors. Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, [S. l.], n. 71, p. 40–45, 2017. DOI: 10.20535/RADAP.2017.71.40-45. Disponível em: https://radap.kpi.ua/radiotechnique/article/view/1412. Acesso em: 7 jun. 2025.