The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors




radiation hardness, SiGe-transistors, analog microcircuits, gamma rays, main static characteristics of transistor


The article considers the effect of 60Co gamma rays on the characteristics (the major ones for the analog ICs) of SiGe n-p-n transistors of SGB25V technology: the voltage across the forward-biased base-emitter junction, the dependence of the static base current gain in the common-emitter (CE) configuration on emitter current, the output characteristic in the CE configuration.

Author Biographies

O. V. Dvornikov, Public Joint Stock Company "MNIPI"

Dvornikov О. V.

V. L. Dziatlau, Public Joint Stock Company "MNIPI"

Dziatlau V. L.

N. N. Prokopenko, Don State Technical University; Institute for Design Problems in Microelectronics of RAS

Prokopenko N. N.

V. A. Tchekhovski, Institute for Nuclear Problems BSU

Tchekhovski V. А.


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How to Cite

Dvornikov, O. V., Dziatlau, V. L., Prokopenko, N. N. and Tchekhovski, V. A. (2017) “The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(71), pp. 40-45. doi: 10.20535/RADAP.2017.71.40-45.



Functional Electronics. Micro- and Nanoelectronic Technology