Radiation Resistance of Test npn IC Transistors with Dielectric Insulation, Manufactured on Silicon, Isovalently Doped with Germanium (SiGe)
Keywords:increase of radiation resistance, npn structure, doping of silicon with germanium, doping level with isovalent impurity, degradation of the amplification factor
There is a contradictory assessment of the possibility of germanium (Ge) use to increase the radiation resistance of silicon (Si) homogeneously doped with an isovalent impurity. A number of publications show that only a limited effect of germanium doping on the radiation stability of the pn-structure, irradiated by high-energy electronsis observed. Simultaneously there is a noticeable improvement in the radiation resistance of npnp-structures made on SiGe under γ-irradiation. In order to remove the contradiction, this work compares the β radiation degradation of test bipolar transistor npn Integrated Curcuit (IC) structures, manufactured using the same technology, "silicon with dielectric insulation", on isovalent germanium-doped SiGe silicon with different Ge content, NGe=1,2·1019…1,2·1020 cm-3. The static gain coefficient β was measured before and after α-irradiation. Irradiation of unencased npn structures with α-particles with an energy of 4.5 MeV carried out in a specially designed and manufactured laboratory installation using radioisotope sources; npn structures with two base thicknesses: 0.25 and 0.35 μm were studied experimentally. The dependence approximating the experimental data, β(Φα), an equation, describing the change in the gain factor of the transistor structure upon α-irradiation, obtained using the OriginPRO program. Obtained results for structures with a base thickness of 0.25 μm show a strong nonlinear dependence of β(Φα) equations on NGe. The degradation of the control transistors gain, manufactured according to the standard technology (NGe = 0) is described by the S-curve. Irradiation of npn structures formed on SiGe wafers with different levels of doping with an isovalent impurity leads to a complete change of the nature of the dependence. For Φα ≤ 1011 см-2 the nature of the change in β is practically the same for structures made on wafers with NGe= 0 and NGe= 2.5·1019 сm-3, as well as for NGe=1,2·1019 сm-3 and NGe=1.2·1020сm-3. When increasing Φα≥ 1011 сm-2 there is an accelerated degradation of the gain factor of npn structures made on wafers with NGe= 2.5·1019 cm-3. This level of doping of silicon with germanium is not acceptable from the point of view of Si radiation resistance. At Φα ≤ 1014 см-2 radiation stability of npn structures made on SiGe wafers with NGe=1.2·1019 см-3 approximately two times lower than the same of control structures with NGe= 0. For transistors with a base thickness of 0.35 μm, no effect of changing the nature of the npn structures β(Φα) degradation. Observed dependence, which confirms the possibility of slowing down the radiation degradation of the amplification factor value of the npn structures made on SiGe. Increase in radiation resistance by 2-3 times for test transistors, made on SiGe wafers, doped with NGe= 7,5·1019 см-3, observed in a wide range of doses of α-irradiation, 1011≤ Φα≤ 1014 см-2.
Bos T., Banducci M. M, et al. under the direction of the Chairman of the Joint Chiefs of Staff (CJCS). (2020). Space Operations.
Thompson L. B. (2021). Geospatial Intelligence. A Test Case for Washington’s Emerging Industrial Policy. Lexington Institute.
Magnuson S. (2022). Ukraine War Called ‘Catalyst’ for Space-Based Remote Sensing Industry. National Defense.
Dubovik O., Schuster G. L., Xu F., Hu Y., Bösch H., Landgraf J. and Li Z. (2021). Grand Challenges in Satellite Remote Sensing. Frontiers in Remote Sensing, Vol. 2, 619818. doi: 10.3389/frsen.2021.619818.
Green, J. C., Likar, J. and Shprits Y. (2017). Impact of space weather on the satellite industry. Space Weather, Vol. 15, Iss. 6, pp. 804–818. doi: 10.1002/2017SW001646.
Zhang J., Cai Y., Xue C., Xue Z., and Cai H. (2022). LEO Mega Constellations: Review of Development, Impact, Surveillance, and Governance. Space: Science & Technology, Volume 2022, Article ID 9865174, 17 p. doi: 10.34133/2022/9865174.
Zebrev, G. (2010). Radiation Effects in Silicon High Scaled Integrated Circuits. National Research Nuclear University MEPHI. DOI:10.13140/2.1.1278.9442.
Space Weather Science and Observation Gap Analysis for the National Aeronautics and Space Administration (NASA) (Sep. 2020-Apr. 2021). A Report to NASA's Space Weather Science Application Program. NASA.
Zastrow M. (2020). How to Improve Space Weather Forecasting. Eos, 101. doi: 10.1029/2020EO145780.
Martines, L. M. S. (2011). Analysis of LEO Radiation Environment and its Effects on Spacecraft's Critical Electronic Devices. Doctoral Dissertations and Master's Theses, 102.
Technology Roadmap Update for Generation IV Nuclear Energy Systems. (2014). Issued by the OECD Nuclear Energy Agency for the Generation IV International Forum.
Reed F. K., Ezell N. D. B., Ericson M. N., Britton C. L., Jr. (2020). Radiation-Hardened Electronics for Reactor Environments. Oak Ridge National Laboratory.
Huang, Q. (2019). Investigation of radiation-hardened design of electronic systems with applications to post accident monitoring for nuclear power plants. Electronic Thesis and Dissertation Repository, 6025.
Iniewski, K. (2018). Radiation Effects in Semiconductors (1st ed.). CRC Press.
Baumann R., Kruckmeyer K. (2020). Radiation Handbook for Electronics. A compendium of radiation effects topics for space, industrial and terrestrial applications. Texas Instruments, 118 p.
Higham E. (2021). Defense Market Trends and the Impact on Semiconductor Technology. Microwave Journal.
Ranita Basu (2022). A review on single crystal and thin film Si–Ge alloy: growth and applications. Materials Advances, Vol. 3, pp. 4489-4513. DOI: 10.1039/D2MA00104G.
Lambrechts W. Sinha S. (2017). SiGe-based Re-engineering of Electronic Warfare Subsystems. Part of the book series: Signals and Communication Technology (SCT). Springer Cham, 329 p. DOI: 10.1007/978-3-319-47403-8.
Singh R., Harame D. L., Oprysko M. M. (2004). Silicon Germanium: Technology, Modeling and Design. Wiley-IEEE Press, 371 p.
Cressler J. D. (2010). Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics. IEEE Transactions on Device and Materials Reliability, Vol. 10, No. 4, pp. 437-448. doi: 10.1109/TDMR.2010.2050691.
Chen J., Vanhellemont J., Simoen E., et al. (2011). Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes. Pys. Status Solidi C, Vol. 8, Iss. 3, pp. 674–677. DOI: 10.1002/pssc.201000142.
Uleckas A., Gaubas E., Rafi J. M., Chen J., Yang D., Ohyama H., Simoen E. and Vanhellemont J. (2011). Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping. Solid State Phenomena, Vols. 178-179, pp 347-352. doi:10.4028/www.scientific.net/SSP.178-179.347.
Bytkin S., Kritskaya T. (2018). Modeling of S-shaped accumulation process A- and E-centers in isovalent doped germanium silicon in statistica and mathcad environment. Modern problems of metallurgy, No. 21, pp. 29-35. DOI: 10.34185/1991-7848.2018.01.06.
Ulyashin A. G., Abrosimov N. V., Bentzen A., et al. (2006). Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1-xGex Materials Science in Semiconductor Processing, Vol. 9, pp. 772–776. doi:10.1016/j.mssp.2006.08.021.
Argunova T. S., Jeb J. H., Kostina L. S., Rozhkov A. V. and Grekhov I. V. (2013). Si1-xGex Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties. ACTA PHYSICA POLONICA A, Special Anniversary Issue: Professor Jan Czochralski Year 2013 -- Invited Paper, Vol. 124. No. 2, pp. 239-243. DOI: 10.12693/APhysPolA.124.239.
Vanhellemont J., Chen J., Xu W., Yang D., Rafi J. M., Ohyama H., and Simoen E. (2010). Germanium Doping of Si Substrates for Improved Device Characteristics and Yield. ECS Transactions, Vol. 27, Iss. 1, pp. 1041-1046. DOI: 10.1149/1.3360748.
Vanhellemont J., Chen J., Lauwaert J., Vrielinck H., Xu W., Yang D., Rafi J. M., Ohyama H., Simoen E. (2010). Germanium doping for improved silicon substrates and devices. Preprint submitted to Journal of Crystal Growth.
Bytkin S. V., Krytskaja T. V., Radin E. G., Goncharov V. I., Kunitskij Yu. I., Kobeleva S. P. (2012). Eksperimental'noe issledovanie harakteristik tiristorov, izgotovlennyh na Si, pri dejstvii gamma-oblucheniya [An Experimental Study of the Characteristics of Thyristors, Manufactured on CZ–Si, Under the Action of Gamma–Irradiation]. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki [Materials of Electronics Engineering], Vol. 3, pp. 45-48. https://doi.org/10.17073/1609-3577-2012-3-45-48.
Santos, L. A. P. (2022). An Overview on Bipolar Junction Transistor as a Sensor for X-ray Beams Used in Medical Diagnosis. Sensors, Vol. 22, Iss. 5, 1923. doi:10.3390/s22051923.
Silicon, Germanium, and Their Alloys. Growth, Defects, Impurities, and Nanocrystals. (2015). Edited by Gudrun Kissinger, Sergio Pizzini. Taylor & Francis Group, 431 p. doi:10.1201/b17868.
Kustov V. E., Kritskaya T. V., Tripachko N. A., Shakhovtsov V. I. (1988). Vliyanie germaniya na vnutrennie uprugie napryazheniya v kislorodosoderzhashchem kremnii [Influence of germanium on internal elastic stresses in oxygen-containing silicon].Fizika i tekhnika poluprovodnikov [Physics and Technics of Semiconductors], Vol. 2, Iss. 2, pp. 313-315.
Dielectric Isolation in Integrated Circuits. (2011). Circuits Today.
Sidorov D. V. (2013). Primenenie radionuklidnyh istochnikov α-izlucheniya dlya imitacii nejtronnogo vozdejstviya na kremnievye bipolyarnye tranzistory [Application of radionuclide sources of α-radiation for simulation of the neutron action on silicon bipolar transistors]. Avtoref. diss. kand. tekhnich. nauk. Spec.: 05.27.01 Tverdotel'naya elektronika, radioelektronnye komponenty, mikro- i nanoelektronika, pribory na kvantovyh effektah [Abstract diss. Сand. Techn. Sciences. Specialty: 05.27.01 Solid-state electronics, radio-electronic components, micro- and nanoelectronics, devices based on quantum effects]. М.: Scientific&Production Enterprise ''Pulsar'', 25 p.
Izmeriteli harakteristik poluprovodnikovyh priborov L2-56, L2-56A. TU 11-81.OMM2.756.00.1. Tekhnicheskoe opisanie i instrukciya po ekspluatacii [Indicators of characteristics of semiconductor devices L2-56, L2-56A. TU 11-81.OMM2.756.00.1. Technical description and instruction manual].
Tutorials for Origin. (2016). OriginLab Corporation.
OriginLab. Category: Origin Basic Functions, Growth/Sigmoidal, Statistics. 30.1.104 Logistic.
OriginLab. Category: Growth/Sigmoidal. 30.1.83 Hill1.
OriginLab. Category: Growth/Sigmoidal. 30.1.105 Logistic5.
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