Temperature Dependence of the Graphene Hall Sensor for Special Applications
DOI:
https://doi.org/10.20535/RADAP.2025.100.%25pKeywords:
Hall sensor, QFS graphene, temperature dependence, off-set signal, spinning current methodAbstract
This study investigates the effect of temperature on the parameters of Hall sensors based on quasi-free-standing (QFS) graphene. The graphene layers were obtained using chemical vapor deposition (CVD) on silicon carbide (4H-SiC (0001)) substrates. This approach ensures high material uniformity and reduces the influence of impurities, allowing the fabrication of sensors with improved metrological characteristics.
The experimental study was conducted in a temperature range from 30 to 120°C. The dependence of the Hall signal on temperature was measured, and sensor stability was evaluated in long-term tests. To enhance measurement accuracy, the current-spinning technique was employed, effectively reducing parasitic signal components arising from thermoelectric effects and material inhomogeneities.
The experimental results indicate that the dependence of the Hall signal on temperature is close to linear for most samples, simplifying temperature correction in practical applications. Some samples exhibit a lower level of temperature-induced variations, which may be attributed to structural variations in the graphene layer or an uneven distribution of residual stresses in the material. The overall signal variation does not exceed 10%, which is acceptable for most technological applications.
The obtained results confirm the potential of QFS graphene for Hall sensors capable of operating under varying temperature conditions. Further research may focus on optimizing sensor structures, improving fabrication methods, and developing algorithms for compensating temperature effects.
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Copyright (c) 2025 Ф. М. Шуригін , Р. В. Біляк , Н. С. Лях-Кагуй, Я. Я. Кость, С. П. Сухоребрий, Т. Цюк, С. Ель-Ахмар
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