Microwave Transistor Oscillators Development Based on Dielectric and Microstrip Resonators
DOI:
https://doi.org/10.64915/RADAP.2026.103.%25pKeywords:
dielectric resonator, microstrip resonator, metamaterial resonator, split-ring resonator, transistor oscillator, reflection coefficientAbstract
The paper shows the possibility of creating microwave range transistor oscillators in Ukraine based on the use of both a Dielectric Resonator (DR) and a Microstrip Metamaterial Resonator (MMR) in the form of a Split-Ring Resonator (SRR), with output oscillation parameters that are comparable to the output oscillation parameters of similar transistor oscillators currently developed by leading scientific groups in the world.
The theoretical part of the work demonstrates analytical and graphical characteristics of the S11 reflection coefficients of the proposed MMR in the form of an SRR and justifies the realistically achievable level of improvement in the quality factor of a resonant system consisting of two SRRs compared to the quality factors of individual SRRs.
Using the Signal Hound and Rohde & Schwarz spectrum analyzers, the output oscillation parameters of four samples of the developed transistor oscillators in the 4 GHz and 10 GHz ranges were investigated, three of which are built on the basis of a HEMT Field-Effect Transistor (FET), and the fourth — on a bipolar transistor. The output frequency of two transistor oscillators — on a FET and bipolar transistor stabilized by a DR. The output frequency of the other two transistor oscillators is stabilized by an MMR in the form of single and double SRRs respectively.
Comparison of the data obtained from the measurement results of the spectral density of phase noise for offset frequencies of 10 kHz showed that the developed transistor oscillators on a bipolar and HEMT FET stabilized by a DR are equivalent to foreign analogues of such oscillators. In turn, for offset frequencies of 100 kHz and 1000 kHz, the developed transistor oscillators stabilized by an MMR equivalent to foreign transistor oscillators stabilized by an MMR with more complex geometric configuration.
The paper may be useful for developers of microwave infocommunications devices, in particular radio-relay, tropospheric and satellite communication systems.
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Copyright (c) 2026 Г. Л. Авдєєнко, О. П. Живков , М. Ю. Ільченко, О. Ф. Крилач , В. М. Степаненко
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