Thermal conditions analyze of impat diodes in millimeter-wave pulse generators

Authors

  • A. V. Gutsul State Enterprise Res. Inst. “Orion”, Kiev
  • O. V. Zorenko State Enterprise Res. Inst. “Orion”, Kiev

DOI:

https://doi.org/10.20535/RADAP.2008.36.76-80

Keywords:

IMPATT diode, oscillator millimeter, microwave equipment

Abstract

There is influence of generator design features and IMPATT diode supply mode on effective layer thermal conditions being examined in this article. Shown, that current pulse width and thermal properties of layers closest to effective are determinative factors given supply power.

Author Biographies

A. V. Gutsul, State Enterprise Res. Inst. “Orion”, Kiev

Gutsul A.V.

O. V. Zorenko, State Enterprise Res. Inst. “Orion”, Kiev

Zorenko O.V.

References

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Ясинский К.А. Тепловой режим импульсных генераторных диодов // Радиотехника и электроника. – 1975. – № 1. – с. 224-226.

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http://www.ansofl.com/products/tools/ephysics/.

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How to Cite

Гуцул, А. and Зоренко, О. (2008) “Thermal conditions analyze of impat diodes in millimeter-wave pulse generators”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(36), pp. 76-80. doi: 10.20535/RADAP.2008.36.76-80.

Issue

No. 36 (2008)

Section

Electrodynamics. Microwave devices. Antennas

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