Tunnel Diode Macro-model in the Electronic Circuits Modeling Systems

Authors

  • J. F. Zinkowskiy National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
  • A. V. Koval National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

DOI:

https://doi.org/10.20535/RADAP.2014.59.85-92

Keywords:

Tunnel Diode, Macro-model, negative resistance

Abstract

Introduction. The circuit simulation programs that are currently in use do not have tunnel diodes macro-models in their standard libraries. So it is important to create and examine a circuit diagram of tunnel diode macro-model, because tunnel diodes are often used for oscillators and amplifiers developing.
Theoretical statement. The tunnel diodes macro-models are based on current / voltage characteristics that correspond to the real static characteristics and parameters. The static current/voltage characteristic of the device is defined by coordinates in characteristic points and contains a region of negative dynamic resistance.
The suggested circuit diagram of tunnel diode macro-model consists of two parallel circuits. One of them forms so called λ-diode, and the other represents diode with parasitic capacitance.
Conclusions. The tunnel diode macro-model was created. A set of equations for parameter computation of micro-models of different types were derived. The oscillator simulation with using created tunnel diode macro-model shows availability of adopted simulating principles.

Author Biographies

  • J. F. Zinkowskiy, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
    Zinkowskiy J.F.
  • A. V. Koval, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
    Koval A.V.

References

Перелік посилань

Хайнеман Р. PSРICE. Моделирование работы электронных схем / Р. Хайнеман. – М. : ДМК, 2005. – 325 с.

Амелина М.А. Программа схемотехнического моделирования Micro Cap 8 / М.А. Амелина, С.А. Амелин. – М. : Горячая линия – Телеком, 2007. – 464 с.

Micro-Cap 10 Electronic Circuit Analysis Program [Електронний ре-сурс]. – Режим доступу: http:// www.spectrum-soft.com.

Петраков О.М. Создание аналоговых PSPICE – моделей радиоэлеме-нтов / О.М. Петраков. – М. : ИП РадиоСофт, 2004. – 208 с.

W. M. Leach, Jr. SPICE Models for Vacuum-Tube Amplifiers / W. M. Leach, Jr. // J. Audio Eng. Soc. – 1995. – Vol 43, No 3. – pp. 117-126.

Молотков В.И. Исследование ВАХ маломощных полевых транзисто-ров и лямбда-диодов и расчет амплитуд автогенератора на лямбда-диоде / В.И. Молотков, Е.И. Потапов // Радиоэлектроника. – 1991. – Т. 34, No 11. – pp. 108-110.

Зіньковський Ю.Ф. Комп’ютерне схемотехнічне моделювання еле-ментів радіоелектроніки. Ч. 2 / Ю.Ф. Зіньковський, А.В. Коваль. – Київ, 2013. – 376 с.

References

Khaineman R. (2005) PSPICE. Modelirovanie raboty elektronnykh skhem [PSPICE. Modeling of electronic circuits]. Moskow, DMK Publ., 325 p.

Amelina M.A. and Amelin S.A. (2007) Programma skhemotekhnicheskogo modelirovaniya Micro Cap 8 [Circuit simulation soft-ware Micro Cap 8]. Moskow, Goryachaya liniya – Telekom, 464 p.

Micro-Cap 10 Electronic Circuit Analysis Program. Available at: http:// www.spectrum-soft.com.

Petrakov O.M. (2004) Sozdanie analogovykh PSPICE – modelei radio-elementov [The creation of analog pspice - models radioelements]. Moskow, IP RadioSoft Publ., 208 p.

W. M. Leach, Jr. (1995) SPICE Models for Vacuum-Tube Amplifiers. J. Audio Eng. Soc., Vol 43, No 3, pp. 117-126.

Molotkov V.I. and Potapov E.I. (1991) Issledovanie VAKh malo-moshchnykh polevykh tranzistorov i lyambda-diodov i raschet amplitud avto-generatora na lyambda-diode [Study of current-voltage characteristics of low-power field-effect transistors and diodes lambda and the calculation of the am-plitudes of the oscillator on the lambda diode]. Radioelektronika. Vol. 34, No 11, pp. 108-110.

Zinkovskyi Iu.F. and Koval A.V. (2013) Komp’iuterne skhemotekhnichne modeliuvannia elementiv radioelektroniky. Ch. 2 [Computer simulation of elec-tronics circuit elements. Part. 2]. Kyiv, 376 p.

Downloads

Published

2014-11-30

Issue

No. 59 (2014)

Section

Functional Electronics. Micro- and Nanoelectronic Technology

License

Authors who publish with this journal agree to the following terms:

  1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
  2. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
  3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).

How to Cite

“Tunnel Diode Macro-model in the Electronic Circuits Modeling Systems” (2014) Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, (59), pp. 85–92. doi:10.20535/RADAP.2014.59.85-92.