Modeling of high-speed electronic devices

Authors

  • V. G. Kudrya Odessa National Academy of Food Technologies, Odessa

DOI:

https://doi.org/10.20535/RADAP.2013.54.151-159

Keywords:

simulation in nanoelectronics, high-frequency electronics, electromagnetic interference

Abstract

Introduction. The theme of this publication is the modeling of electronic tools that operate in the frequency range from zero to terahertz and higher. Application of new concepts and technologies, including biotechnology and nanotechnology in the development of monolithic integrated circuits led to a backlog of technologies of projecting from technologies and experimental research and manufacturing. The aim of this work is to develop algorithms for analysis, reflecting not only topological as well as morphological properties of the object, that is designing within the framework of accounting EMI communicational  transmission of energy and information in the volume of the monolithic integrated circuit. Basic steps for constructing the algorithm. The object of design is presented in the form of basic elements, which can be combined with a communication structure. The object of design is presented in the form of basic elements, which can be combined with a communication structure. There are three types of matrix equations: component; component - communication structure; communication structure. Systems of equations are reduced to standardized descriptors of mathematical model by which to understand current of poles and voltage arcs whole set of basic elements. In this way obtained mathematical model that can be implemented in CAD nano and micro technology electronics. Conclusions. Mathematical models of analysis of high-speed digital and analog electronic means. The algorithm allows morphological optimization is to minimize the adverse effects outside the system of electromagnetic interaction between the components and communicator.

Author Biography

V. G. Kudrya, Odessa National Academy of Food Technologies, Odessa

Cand. of Sci (Techn), Assoc. Prof.

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Published

2013-11-01

How to Cite

Кудря, В. Г. (2013) “Modeling of high-speed electronic devices”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(54), pp. 151-159. doi: 10.20535/RADAP.2013.54.151-159.

Issue

No. 54 (2013)

Section

Controvery

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