Formation of nano-sizes in microelectronics

Authors

  • O. S. Kysil National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

DOI:

https://doi.org/10.20535/RADAP.2010.40.149-153

Keywords:

ion etching, etching speed

Abstract

The physical analysis of ion etching of surfaces which are often used in microelectronics is carried out; the article contains results of modeling using developed program.

Author Biography

  • O. S. Kysil, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
    Кисіль О.С., магістрант радіотехнічного факультету

References

Данилин Б.С., Киреев В.Ю. Применение низкотемпературной плазмы для трав-ления и очистки материалов. – М.: Энергоатомиздат. – 1987.-264 с.

Данилин Б.С., Киреев В.Ю. Ионное травление микроструктур. – М.: Сов. радио. – 1979. – 104 с.

Броудай И., Мерей Дж. Физические основы микротехнологии. М.:Мир.1985. 496с

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Issue

No. 40 (2010)

Section

Functional Electronics. Micro- and Nanoelectronic Technology

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How to Cite

“Formation of nano-sizes in microelectronics” (2010) Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, (40), pp. 149–153. doi:10.20535/RADAP.2010.40.149-153.