Formation of nano-sizes in microelectronics

Authors

  • O. S. Kysil National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

DOI:

https://doi.org/10.20535/RADAP.2010.40.149-153

Keywords:

ion etching, etching speed

Abstract

The physical analysis of ion etching of surfaces which are often used in microelectronics is carried out; the article contains results of modeling using developed program.

Author Biography

O. S. Kysil, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

Кисіль О.С., магістрант радіотехнічного факультету

References

Данилин Б.С., Киреев В.Ю. Применение низкотемпературной плазмы для трав-ления и очистки материалов. – М.: Энергоатомиздат. – 1987.-264 с.

Данилин Б.С., Киреев В.Ю. Ионное травление микроструктур. – М.: Сов. радио. – 1979. – 104 с.

Броудай И., Мерей Дж. Физические основы микротехнологии. М.:Мир.1985. 496с

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How to Cite

Кисіль, О. (2010) “Formation of nano-sizes in microelectronics”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(40), pp. 149-153. doi: 10.20535/RADAP.2010.40.149-153.

Issue

No. 40 (2010)

Section

Functional Electronics. Micro- and Nanoelectronic Technology

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