Ion-selective field-effect transistors. Threshold voltage calculation

Authors

  • M. M. Prischepa National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
  • S. V. Lozovyi V.E. Lashkaryov Institute of semiconductor physics, Kiev

DOI:

https://doi.org/10.20535/RADAP.2012.50.105-113

Keywords:

ion-selective field-effect transistor, ISFET, ion solution composition, threshold voltage

Abstract

Ion-selective field-effect transistors (ISFET) are being developed and improved to study ion solution composition. It is necessary to determine threshold ISFET voltage on the basis of process data for design and improvement of sensor control circuit. The threshold voltage analytical calculation for p-channel ISFET is presented in this article.

Author Biographies

M. M. Prischepa, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

Cand. of Sci.(Techn), Assoc. Prof.

S. V. Lozovyi, V.E. Lashkaryov Institute of semiconductor physics, Kiev

M.Sci.

References

P. Bergveld. ISFET, Theory and Practice // IEEE Sensor Conference, Toronto, Canada. – Oct. 2003. – P. 1–26.

Прищепа М.М., Погребняк В.П. Мікроелектроніка. В 3 ч. Ч. 1. Елементи мікроелектроніки: Навч. посіб. / За ред. М. М. Прищепи. – К.: Вища шк. – 2004. – 431. - с. ISBN 966-642-223-9(ч.1).

P. Bergveld. Thirty years of ISFETOLOGY – What happened in the past 30 years and what may happen in the next 30 years // Sensors and Actuators, B. – 2003. – Vol.88. – P. 1–20.

А.Л. Кукла, А.С. Павлюченко, Ю.В. Голтвянский, Ю.М. Ширшов. Многоэлементные сенсорные массивы на основе интегральных кремниевых ионоселективных полевых транзисторов для систем химического мониторинга // Оптоэлектроника и полупроводниковая техника. – Киев. – Наукова думка. – Вып. 42. – 2007. – С.72-79.

Advances in chemical sensors, biosensors and microsystems based on ion-sensitive field-effect transistor. V K Khanna. Indian Journal of Pure & Applied Physics vol. 45. – April 2007. – PP 345–353.

Downloads

Published

2012-11-30

How to Cite

Прищепа, М. and Лозовий, С. (2012) “Ion-selective field-effect transistors. Threshold voltage calculation”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(50), pp. 105-113. doi: 10.20535/RADAP.2012.50.105-113.

Issue

No. 50 (2012)

Section

Functional Electronics. Micro- and Nanoelectronic Technology

License

Authors who publish with this journal agree to the following terms:

  1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
  2. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
  3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).