From microelectronics to nanoelectronics
DOI:
https://doi.org/10.20535/RADAP.2007.35.132-137Abstract
The brief review of the literature in area nanoelectronics is submitted which reflects the analysis of fundamental restrictions of reduction of the sizes of elements of the integrated circuits, their number in one crystal, increase of speed and functionalities.References
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2. Technology Roadmap for Nanoelectronics/European Comission 1ST programme Future and Emerging Technologies //Edit R.Compano Second Edition, November 2000
3. Okuto Y. Fundamental Perfomance Limit of Integrated Systems/Jpn. J.Appl.Phys.1996. V.35.P.612-615
4. Transport in Submicrometer Devices O.K.Ferry.R.O.Grondm / Ch. 12 VLSI Electronics Microstrucrure Science V.9 .// Ed. N G.Einspruch 1985 Acad.Press.FNC. N.Y.
5. Keyes R.W. THE PHYSICS OF VLSI SYSTEMS/ Ch.4, 7,8 1987 Addison-Wesley Co Wokingham, England
б. Реегсу P.S. The drive to miniaturization / Nature 2000 V.406 P. 1023-1026
7. Levinson M.D. Extending the Lifetime of Optical Lithography Technologies with Waveform Engineering /Jpn.J Appl.Phys. 1994. V.33 P.6756-6773
8. An Electron Beam Nanolithography System and its Application to Si Nanofabricatiort/K.Kurihara, K.Iwadate, H.Namatsu and others //Jpn/J/Appl/phys 1995 V.34 Part.l N.12B. p.6940-6946
9. Intense Focused Ion Beams for Nanostructurisation / S Kalbitzer, Ch.Wilbertz, Th.Miller //Nanolithography: A Borderland between STM, EB, IB, and X-Ray Lithography Ed. M.Gentili, C.Giovanella, S.Selcy //Kluwer Acad.Publ. London. P. 137-148
10. Smith H.I., Schattenburg M.L. X-Ray Nanolithography: Limits, and Application to SUB-100 NM Manufactoring / CM. 9. P. 103-119
11. Dagata J.A. STM Nanolithography and Characterization of Passivated Silicon and Gallium Arsenide // CM.9. P. 189-196
12. Букингем М. Шумы в электронных приборах и системах. / М.Мир. 1986 Гл.5.
13. Жалуд.В., Кулешов В. Шумы в полупроводниковых устройствах/М. Сов. радио 1977.
14. McWhorter A.L., in "Semiconductor Surface Physics" Ed/R.H.Kingston 1956 Univ. Pensilv.Press Philadelphia. ,
15. Impact of Scaling Down on Low Frequency Noise in Silicon MOS Transistors /G.Ghibaude, O.Roux, J.Brini // Proc. Intem.Conf.24.11-27.111991 Kyoto, Japan Noise in Physical Systems and 1/f Fluctuations Ed/.T.Musha,S.Sato,M.Yamomoto 1991. Omsha Ltd. P.229-232
16. Low Frequency Fluctuations and 1/f Noise in Scaled Down Silicon CMOS Devices//Proc. 13th Intem.Conf. Noise in Physical Systems and 1/f Fluctuations 29.5-3.6.1995 Palanga Lithuania //Ed V.Bareikis, R.Katilius//World Scientific 1995. London P. 404-409
17. Lukyanchikova N. Lorentzian Components in Low-Frequency Noise Spectra of SOI MOSFETS Proc. 16* Intem.Conf. Noise in Physical Systems and 1/f Fluctuations //Ed G.Bosman World Scientific.2001 London P127-132 .
18. Low Frequency Noise Characterization in 0.18 mkm Technology N and P Channel MOSFETS./ Y. A.Allogo, M.Marin, M.DeMurcia and othrers//CM. [17] P. 137-140
19. Park N.. Kenneth K.O. A comparison of 1/f Noise of 0.25 mkm NMOS and PMOS Transistors from Deep-Subthreshold to Strong Inversion // см.[17] Р.153-156
20. Fantini P., Vendrame L., Riccardi D. Low Frequency Noise in CMOS Transistors: an Experimental and Comparative Study on Different Technologies //cм. [17], P. 145-152.
21. Flicker Noise in Submicron MOSFETS with 3.5 run Nitrided Gate Oxide /E.Simoen,
M.Da Rold, C.Clayes and others //CM. [17] P. 177-184
22. Low Frequency Noise in Poly-Si and Poly SiGe-Gated MOSFETS // J.A.Johansen, H.Figenschau, X.Chen and others // CM.' [17] P.161-164
23. Келдыш Л В. О влиянии ультразвука на электронный спектр кристалла ФТТ 1962. Т.4. С.2265-2267.
24. Esaki L Tsu R. Superlattice and Negative Differencial Conductivity in Semiconductors /IBM J. Res. And Dev. 1970 V. 14 P.61-65
25. Херман М. Полупроводниковые сверхрешетки. //УМ. Мир 1989. 240 С.
26. Драгунов В.П., Неизвестный И.Г., Гридчии В.А. Основы наноэлектроники. Новосибирск 2000. 331 С
27. Гуляев A.M. Оптоэлектронные приборы на структурах с квантово-размерном эффектом / Итоги науки и техники Электроника ВИНИТИ Т.20 1988. С. 129-159
28. Гуляев A.M. приборы на основе структур с квантово-размерным эффектом /Итоги науки и техники Электроника ВИНИТИ Т.27.1990. С. 129-159
2. Technology Roadmap for Nanoelectronics/European Comission 1ST programme Future and Emerging Technologies //Edit R.Compano Second Edition, November 2000
3. Okuto Y. Fundamental Perfomance Limit of Integrated Systems/Jpn. J.Appl.Phys.1996. V.35.P.612-615
4. Transport in Submicrometer Devices O.K.Ferry.R.O.Grondm / Ch. 12 VLSI Electronics Microstrucrure Science V.9 .// Ed. N G.Einspruch 1985 Acad.Press.FNC. N.Y.
5. Keyes R.W. THE PHYSICS OF VLSI SYSTEMS/ Ch.4, 7,8 1987 Addison-Wesley Co Wokingham, England
б. Реегсу P.S. The drive to miniaturization / Nature 2000 V.406 P. 1023-1026
7. Levinson M.D. Extending the Lifetime of Optical Lithography Technologies with Waveform Engineering /Jpn.J Appl.Phys. 1994. V.33 P.6756-6773
8. An Electron Beam Nanolithography System and its Application to Si Nanofabricatiort/K.Kurihara, K.Iwadate, H.Namatsu and others //Jpn/J/Appl/phys 1995 V.34 Part.l N.12B. p.6940-6946
9. Intense Focused Ion Beams for Nanostructurisation / S Kalbitzer, Ch.Wilbertz, Th.Miller //Nanolithography: A Borderland between STM, EB, IB, and X-Ray Lithography Ed. M.Gentili, C.Giovanella, S.Selcy //Kluwer Acad.Publ. London. P. 137-148
10. Smith H.I., Schattenburg M.L. X-Ray Nanolithography: Limits, and Application to SUB-100 NM Manufactoring / CM. 9. P. 103-119
11. Dagata J.A. STM Nanolithography and Characterization of Passivated Silicon and Gallium Arsenide // CM.9. P. 189-196
12. Букингем М. Шумы в электронных приборах и системах. / М.Мир. 1986 Гл.5.
13. Жалуд.В., Кулешов В. Шумы в полупроводниковых устройствах/М. Сов. радио 1977.
14. McWhorter A.L., in "Semiconductor Surface Physics" Ed/R.H.Kingston 1956 Univ. Pensilv.Press Philadelphia. ,
15. Impact of Scaling Down on Low Frequency Noise in Silicon MOS Transistors /G.Ghibaude, O.Roux, J.Brini // Proc. Intem.Conf.24.11-27.111991 Kyoto, Japan Noise in Physical Systems and 1/f Fluctuations Ed/.T.Musha,S.Sato,M.Yamomoto 1991. Omsha Ltd. P.229-232
16. Low Frequency Fluctuations and 1/f Noise in Scaled Down Silicon CMOS Devices//Proc. 13th Intem.Conf. Noise in Physical Systems and 1/f Fluctuations 29.5-3.6.1995 Palanga Lithuania //Ed V.Bareikis, R.Katilius//World Scientific 1995. London P. 404-409
17. Lukyanchikova N. Lorentzian Components in Low-Frequency Noise Spectra of SOI MOSFETS Proc. 16* Intem.Conf. Noise in Physical Systems and 1/f Fluctuations //Ed G.Bosman World Scientific.2001 London P127-132 .
18. Low Frequency Noise Characterization in 0.18 mkm Technology N and P Channel MOSFETS./ Y. A.Allogo, M.Marin, M.DeMurcia and othrers//CM. [17] P. 137-140
19. Park N.. Kenneth K.O. A comparison of 1/f Noise of 0.25 mkm NMOS and PMOS Transistors from Deep-Subthreshold to Strong Inversion // см.[17] Р.153-156
20. Fantini P., Vendrame L., Riccardi D. Low Frequency Noise in CMOS Transistors: an Experimental and Comparative Study on Different Technologies //cм. [17], P. 145-152.
21. Flicker Noise in Submicron MOSFETS with 3.5 run Nitrided Gate Oxide /E.Simoen,
M.Da Rold, C.Clayes and others //CM. [17] P. 177-184
22. Low Frequency Noise in Poly-Si and Poly SiGe-Gated MOSFETS // J.A.Johansen, H.Figenschau, X.Chen and others // CM.' [17] P.161-164
23. Келдыш Л В. О влиянии ультразвука на электронный спектр кристалла ФТТ 1962. Т.4. С.2265-2267.
24. Esaki L Tsu R. Superlattice and Negative Differencial Conductivity in Semiconductors /IBM J. Res. And Dev. 1970 V. 14 P.61-65
25. Херман М. Полупроводниковые сверхрешетки. //УМ. Мир 1989. 240 С.
26. Драгунов В.П., Неизвестный И.Г., Гридчии В.А. Основы наноэлектроники. Новосибирск 2000. 331 С
27. Гуляев A.M. Оптоэлектронные приборы на структурах с квантово-размерном эффектом / Итоги науки и техники Электроника ВИНИТИ Т.20 1988. С. 129-159
28. Гуляев A.M. приборы на основе структур с квантово-размерным эффектом /Итоги науки и техники Электроника ВИНИТИ Т.27.1990. С. 129-159
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Published
2012-12-13
How to Cite
Руденко, Н. and Силакова, Т. (2012) “From microelectronics to nanoelectronics”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(35), pp. 132-137. doi: 10.20535/RADAP.2007.35.132-137.
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