Оptical active area light-diodes parameters under influence of radiating radiation
DOI:
https://doi.org/10.20535/RADAP.2009.39.126-130Keywords:
light-emitting diodes, radioactivity stability semiconductorAbstract
The ratio determining change of the carrier life time in semi-conductor materials under influence of radiation are receivedReferences
Коган Л.М. Современное состояние полупроводниковых излучающих диодов //Электронные компоненты. — 2000. — №2. — С. 22 - 27.
Никифоров С.Г. Почему светодиоды не всегда работают так, как хотят их производители? // Компоненты и технологии. — 2005. — № 7 — С. 16 – 24.
Bergh A. Dean P. Light-emitting diodes // Clarendon Press. Oxford. — 1976. — 686 p.
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Руденко, Н. and Стужук, І. (2009) “Оptical active area light-diodes parameters under influence of radiating radiation”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(39), pp. 126-130. doi: 10.20535/RADAP.2009.39.126-130.
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Functional Electronics. Micro- and Nanoelectronic Technology
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