Impedance spectroscopy of Si whiskers in the range of metal-insulator transition

Authors

  • A. O. Druzinin Lviv Polytechnic National University, Lviv
  • I. P. Ostrovskii Lviv Polytechnic National University, Lviv
  • Yu. M. Khoverko Lviv Polytechnic National University, Lviv
  • R. M. Koretskyy Lviv Polytechnic National University, Lviv

DOI:

https://doi.org/10.20535/RADAP.2013.55.97-106

Keywords:

silicon, whiskers, metal–insulator transitions, impedance spectroscopy

Abstract

Introduction. The paper deals with investigation of impedance spectroscopy of Si whiskers with doping concentration in the vicinity to metal-insulator transition in the region of low (4,2 – 70 K) temperature and frequency range 0,01 – 250x103 Hz. Experimental results. The silicon whiskers were grown by chemical vapour deposition method in closed bromine system. The whiskers of 40x10-6 m in diameter have boron concentration from 2×1018 to 2×1019 сm-3. The impedance spectroscopy of Si whiskers was investigated with use of Lock-in amplifier in the region of low (4,2 – 70 K) temperature and frequency range 0,01 – 250 x 103 Hz. The investigations showed that in the range of zone conductance (T= 30 – 70 K) the whisker impedance has inductive character, while at the range of impurity conductance (T = 4,2 – 20 K) impedance changes to capacity character. The reduction of impurity concentration at dielectric side of metal-insulator transition leads to decrease of the whisker capacity in the range of low temperatures. Discussion. An inductive character of whisker impedance is explained skin-effect of conductance in thin whisker, while capacity character of the whisker impedance is connected with hopping conductance on impurity band. Conclusions. Character of changes of Si whisker impedance conductance is discussed in the frame of hopping conductance on impurity band, which takes place at low temperatures.

Author Biographies

A. O. Druzinin, Lviv Polytechnic National University, Lviv

Doc. of Sci(Techn), Prof.

I. P. Ostrovskii, Lviv Polytechnic National University, Lviv

Doc. of Sci(Techn), Assoc. Prof.

Yu. M. Khoverko, Lviv Polytechnic National University, Lviv

Cand. of Sci(Techn)

R. M. Koretskyy, Lviv Polytechnic National University, Lviv

_

References

Література

Дружинін А.О Ниткоподібні кристали кремнію, германію та їх твердих розчинів у сенсорній електроніці / Островський І.П., Когут Ю.Р. : Монографія.– Львів, НУ «Львівська політехніка», 2010. – 200 с. [Publ.]

Mora-Sero I. Implications of the Negative Capacitance Observed at Forward Bias in Nanocomposite and Polycrystalline Solar Cells / I. Mora-Sero, J. Bisquert // Nano Letters. – 2006. – Vol. 6. – № 4. – p. 640−650. doi: 10.1021/nl052295q

Bisquert J. Inductive behaviour by charge-transfer and relaxation in solid-state electrochemistry / J. Bisquert, H. Randriamahazaka, G. Garsia-Belmonte // Electrochimica Acta. – 2005. – Vol. 51, № 4 – p. 627−640. doi: 10.1016/j.electacta.2005.05.025

Mora-Sero I. Implications of the Negative Capacitance Observed at Forward Bias inanocomposite and Polycrystalline Solar Cells / I. Mora-Sero, J. Bisquert, F. Fabregat-Santiago, G. Garcia Belmonte // Nano Letters. – 2006. – Vol. 6, № 4. – p. 640-650. doi: 10.1021/nl052295q

Аверкиев Н.С. Частотная зависимость емкости в структурах на основе пористого кремния / Н.С. Аверкиев, Л.М. Капитонова, А.А. Лебедев, А.Д. Ременюк // Физика и техника полупроводников. – 1996. – Т. 30, № 12. – c. 2178-2182. [Publ.]

Werner J. Origin of the Excess Capacitance at Intimate Schottky Contacts / A. Levi, R.T. Tung // Physical review letters. – 1988. – Vol. 60. – p.53-56. doi: 10.1103/PhysRevLett.60.53

Wu X. Negative capacitance at metal-semiconductor interfaces / X. Wu, E.S. Yang, H.L. Evans // Journal of Applied Physics. – 1990. – Vol. 68. – p. 2845-2848. doi: 10.1063/1.346442

Steiner K. Inductive reactances and excess capacitances at WNx/n–GaAs Schottky gate contacts / K. Steiner, N. Uchitami, N. Toyoda // Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. – 1990. – Vol. 8, № 5. – p. 1113–1116. doi: 10.1116/1.584926

Поклонский Н.А. Отрицательная емкость (импенданс индуктивного типа) кремниевых р+– n- переходов, облученных быстрыми електронами / Н.А. Поклонский, С.В. Шпаковский, Н.И. Горбачу, С.Б. Ластовский // Физика и техника полупроводников. – 2006. – Т. 40, № 7. – с. 824-828. doi: 10.1134/S1063782606070128

Дружинін А.О. Електропровідність та магнетоопір ниткоподібних кристалів кремнію // А.О. Дружинін, І.П. Островський, Ю.М. Ховерко, Р.М. Корецький, С.Ю. Яцухненко // Вісник Національного університету “Львівська політехніка”, Електроніка. – 2012. – № 734. – С. 91-97. [Publ.]

Ермаков А.П. Механические свойства нитевидных кристаллов кремния и германия при внешних воздействиях и методы их изучения : дис. на соискание наук. ступеня канд. техн. наук : спец. 01.04.07 «Физика твердого тела» / А. П. Ермаков ; Воронежский государственный технический университет. – Воронеж, 2000.

References

Druzhynin A.O., Ostrovskyi I.P., Kogut Yu.R. (2010) Nytkopodibni krystaly kremniiu, germaniiu ta yikh tverdykh rozchyniv u sensornii elektronitsi [Whiskers of silicon, germanium and their solid solutions in sensors electronic]. Lviv, Lvivska politekhnika Publ., 200 p. [Publ.]

Mora-Sero I., Bisquert J. (2006) Implications of the Negative Capacitance Observed at Forward Bias in Nanocomposite and Polycrystalline Solar Cells. Nano Letters, Vol. 6., No 4, pp. 640−650. doi: 10.1021/nl052295q

Bisquert J., Randriamahazaka H., Garsia-Belmonte G. (2005) Inductive behaviour by charge-transfer and relaxation in solid-state electrochemistry. Electrochimica Acta, Vol. 51, No 4, pp. 627−640. doi: 10.1016/j.electacta.2005.05.025

Mora-Sero I., Bisquert J., Fabregat-Santiago F., Garcia Belmonte G. (2006) Implications of the Negative Capacitance Observed at Forward Bias inanocomposite and Polycrystalline Solar Cells. Nano Letters, Vol. 6, No. 4. pp. 640-650. doi: 10.1021/nl052295q

Averkiev N.S., Kapitonova L.M., Lebedev A.A., Remeniak A.D. (1996) Chastotnaia zavisimost yemkosti v strukturakh na osnove porystogo kremniia []. Physics and Technics of Semiconductors. Vol. 30, No 12, pp. 2178-2182.

Werner J., Levi A.F.J., Tung R.T., Anzlowar M., Pinto M. (1988). Origin of the excess capacitance at intimate Schottky contacts. Physical review letters. Vol. 60, pp. 53-56. doi: 10.1103/PhysRevLett.60.53

Wu X., Yang E.S., Evans H.L. (1990) Negative capacitance at metal-semiconductor interfaces. Journal of Applied Physics, Vol. 68, pp. 2845-2848. doi: 10.1063/1.346442

Steiner K., Uchitami N., Toyoda N. (1990) Inductive reactances and excess capacitances at WNx/n–GaAs Schottky gate contacts. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 5, pp. 1113–1116. doi: 10.1116/1.584926

Poklonski N. A., Shpakovski S. V., Gorbachuk N. I., Lastovskii S. B. (2006) Negative capacitance (impedance of the inductive type) of silicon p+–n junctions irradiated with fast electrons. Semiconductors. Vol. 40, No 7, pp. 803-807. doi: 10.1134/S1063782606070128

Druzhinin A.A., Ostrovskii I.P., Khoverko Yu.M., Koretskyy R.M., Yatsukhnenko S.Yu. (2012) Elektroprovidnist ta magnetoopir nytkopodibnyh krystaliv kremniiu. Visnyk of Lviv Polytechnic National University, Electronics, no. 734, pp. 91-97. [Publ.]

.Ermakov A.P. Mehanicheskie svoystva nitevidnyih krystallov kremniia i germaniia pry vneshnyh vozdeystviyah i metodyi yh izucheniya. Dis. kand. tehn. nauk. [Mechanical properties of whiskers of silicon and germanium caused by external influences and methods of their study. Cand. tech. sci. diss.]. Voronezh, 2000.

Published

2013-12-10

How to Cite

Дружинін, А., Островський, І., Ховерко, Ю. and Корецький, Р. (2013) “Impedance spectroscopy of Si whiskers in the range of metal-insulator transition”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(55), pp. 97-106. doi: 10.20535/RADAP.2013.55.97-106.

Issue

Section

Functional Electronics. Micro- and Nanoelectronic Technology