Silicon-germanium wiskers as sensitive elements of strain sensors, operating in harsh conditions
DOI:
https://doi.org/10.20535/RADAP.2013.54.126-135Keywords:
Silicon-germanium, whiskers, metal-insulator transition, strain, sensor, microcontrollerAbstract
Introduction. The paper deals with investigation of electrophysical performances of Si1-xGex whiskers as strain sensors, operating at harsh conditions, in particular at liquid helium temperatures, and development of measurable system for signal treatment from the sensors. Experimental results. It was found that compression strained Si1-xGex (x = 0,01 ÷ 0,03) microcrystals with a resistivity ρ300 =1,6*10-4 Om*m can be used as sensitive elements of sensors of mechanical quantities operating at cryogenic temperatures. It was elaborated a measuring system using sensing elements based on Si1-xGex microcrystals with simultaneous correction of their temperature dependences, which will take into account the temperature dependence of the coefficient tensosensibility on environment temperature. Discussion. A low temperature whisker conductance is explained by Mott law and hopping conductance on twice occupied states of boron impurity. Conclusions. Gauge factor of Si-Ge whiskers was shown to have a very high value at low temperatures (of about 51000 at 4,2 K). that has been used for high sensitivity strain sensors and measuring system elaboration.References
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http://ww1.microchip.com/downloads/en/DeviceDoc/39662c.pdf
http://www.analog.com/static/imp.-files/Data_Sheets/AD77987799.pdf
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