Development НЕМТ.

Authors

  • S. M. Dyachenko National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
  • A. N. Pavliuchenkova National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

DOI:

https://doi.org/10.20535/RADAP.2010.42.166-170

Keywords:

Gallium Nitride, HEMT

Abstract

This paper provides an overview of recent work and future directions High Electron Mobility Transistor development.

Author Biographies

S. M. Dyachenko, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

Дяченко С.М., к.т.н., доц. кафедри радіотехнічних пристроїв та систем

A. N. Pavliuchenkova, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

Павлюченкова А.М., студентка радіотехнічного факультету

References

Дулин В.Н., Аваев Н.А., Демин В.П. и др., под. ред. Г.Г. Шишкина. Электронные приборы. – М.:Энергоавтомиздат. – 1989. – 495с.

Kim T., Kim D., Shin S., Jo S., Jang J., Song J. Characteristics of 0.2 µm depletionand quasienhancement mode self-aligned gate capless p-HEMTs // ELECTRONICS LETTERS . – 2006. – № 20.

Шахнович И. Твердотельные СВЧ-приборы и технологии. Состояние и перспективы // Электроника НТБ. – 2005. – №5. – с.59.

Босый В.И., Иващук А.В., Ковальчук В.Н., Семашко Е.М.Мощные СВЧ-тарнзисторы на основе широкозонных полупроводников // Технология и конструирование в электронной аппаратуре. – 2003. – №3. – с.54.

Rajan S., Mishra U., Palacios T. AlGaN / GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS // International Journal of High Speed Electronics and Systems.-2008. – №4. – c.155-163.

Poblenz C., Corrion A., Recht F., Sun Chang Soo, Chu Rongming, Shen Likun, Speck James S., Mishra Umesh K. Power performance of AlGaN / GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz // IEEE Electron Devise Lett. – 2007. – №11, c. 945-947.

Tyagi R., Ahlawat A., Pandey M., Pandey S. New two-dimensional C-V model for prediction of maximum frequency of oscillation (fmax) of deep submicron AlGaN / GaN HEMT for microwave and millimeter wave applications // Microelectronics J. - 2008. – №12.

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita, Toshiyuki Oishi, YujiAbe,Yasunori Tokuda,Yoshinobu Aoyagi. Remarkable breakdown voltage enhancement in AlGaN channel highelectron mobility transistors // Appl. Phys. Lett. – 2008. – №92.

Wang X.L.Chen T.S.Xiao H.L.,Tang J.,Ran J.X.,Zhang M.L.,Feng, C.,Hou, Q.F.,Wei M.,Jiang L.J.,Li J.M.,Wang Z. An internally-matched GaN HEMTs device with 45.2W at 8GHz for X-band application // Solid-State Electronics. – 2009. – Vol. 53. – Р.332-335.

Poulton M.,Krishnamurthy K., Martin J., Landberg B., Vetury R., Aichele D.WIDEBAND 400 W PULSED POWER GAN AMPLIFIER // Microwave J. 2008. – V. 51.

Samoska L., Deal W., Pukala D., Fung A. Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz // IEEE Trans. on MTT. – 2008. – Vol. 56. – Р.1380-1388.

Liang C., Yu-Ru Li, Li-Hung Lin, Po-Tsun Lin, Chun-Kai Yang,Yen Shung Tseng, Kuang Yao Chen, Cooper N., Simmons M., Ritchie D. Electron heating and huge posi tive magnetoresistance in an AlGaAs/GaAs high electron mobility transistor structure at high temperatures // APPL. PHYS. LETT. – 2008 . – №92. – Р.152117 .

Hashim, Abdul Manaf, Ahir, Zon Fazlila Mohd, Kasai, Seiya,Hasegawa, Hideki.Odd Harmonic Responses in Two-Dimensional AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction // AIP Conference Proceedings. – 2009. – Vol. 1150. – Р.328-335.

Белов Л. Твердотельные усилители малой и средней мощности // Електроника: НТБ. – 2006. – №5. – с.50.

Аболдуев И.М., Гладышева Н.Б., Дорофеев А.А. Разработка НЕМТ на основегетероструктур AlGaN/GaN/сапфир» // Материалы VI-ой НТК «Твердотельная электроника, сложные функциональные блоки РЭА». – 2007. – с. 39.

Downloads

How to Cite

Дяченко, С. and Павлюченкова, А. (2010) “Development НЕМТ.”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(42), pp. 166-170. doi: 10.20535/RADAP.2010.42.166-170.

Issue

No. 42 (2010)

Section

Reviews

License

Authors who publish with this journal agree to the following terms:

  1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
  2. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
  3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).

Most read articles by the same author(s)