Вплив гамма-випромінювання на основні статичні характеристики SiGe транзисторів


Анотація

Розглянуто вплив гамма-випромінювання радіонукліда 60Co на найбільш важливі для аналогових мікросхем характеристики SiGe n-p-n транзисторів техпроцесу SGB25V: напруга на прямозміщеному емітерному переході, залежність статичного коефіцієнта передачі струму бази в схемі із спільним емітером (СЕ) від емітерного струму, вихідна характеристика в схемі з СЕ.

Бібліографічний опис

 
ДСТУ ГОСТ 7.1:2006 У транслітерації (формат Harvard)
 
Dvornikov, O. V. The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors / Dvornikov, O. V., Dziatlau, V. L., Prokopenko, N. N., Tchekhovski, V. A. // Visn. NTUU KPI, Ser. Radioteh. radioaparatobuduv. – 2017. – № 71. – с. 40-45. Dvornikov, O. V., Dziatlau, V. L., Prokopenko, N. N., Tchekhovski, V. A. (2017) The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors. Visn. NTUU KPI, Ser. Radioteh. radioaparatobuduv., no. 71, pp. 40-45.
 

Повний текст:


Посилання


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