The Method of Bandwidth Extension of SiGe BiCMOS Microwave Variable-Gain Amplifier Integrated Circuit

Authors

  • E. M. Savchenko JSC "SPE (Scientific production enterprise) "Pulsar", Moscow
  • A. S. Budiakov JSC "SPE (Scientific production enterprise) "Pulsar", Moscow
  • P. S. Budiakov JSC "SPE (Scientific production enterprise) "Pulsar", Moscow
  • N. N. Prokopenko Don State Technical University, Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS), Zelenograd http://orcid.org/0000-0001-8291-1753

DOI:

https://doi.org/10.20535/RADAP.2017.69.5-10

Keywords:

variable-gain amplifier, "folded" casсode, operational amplifier, SiGe BiCMOS technology, R-2R matrix, cancellation, upper frequency limit

Abstract

The article proposes a method of bandwidth extension of the analog integrated circuit of the variable-gain amplifier (VGA) based on SiGe BiCMOS technology with the rules of 0.18 µm. The designed VGA has a linear (in dB) control characteristic. The authors consider the VGA architecture and present its design outputs. They describe the properties of two modifications of the VGA integrated circuit – with classical correction of the response and with the circuit of the parasitic capacitance cancellation in the high-impedance node. The article shows that the second circuit solution allows increasing the upper frequency limit of the VGA by a factor of 1.8-2.

Author Biographies

E. M. Savchenko, JSC "SPE (Scientific production enterprise) "Pulsar", Moscow

Savchenko Е. М.

A. S. Budiakov, JSC "SPE (Scientific production enterprise) "Pulsar", Moscow

Budiakov А. S.

P. S. Budiakov, JSC "SPE (Scientific production enterprise) "Pulsar", Moscow

Budiakov P. S.

N. N. Prokopenko, Don State Technical University, Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS), Zelenograd

Prokopenko N. N.

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Published

2017-07-01

How to Cite

Savchenko, E. M., Budiakov, A. S., Budiakov, P. S. and Prokopenko, N. N. (2017) “The Method of Bandwidth Extension of SiGe BiCMOS Microwave Variable-Gain Amplifier Integrated Circuit”, Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, 0(69), pp. 5-10. doi: 10.20535/RADAP.2017.69.5-10.

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Section

Electrodynamics. Microwave devices. Antennas