Оptical active area light-diodes parameters under influence of radiating radiation

Authors

  • N. M. Rudenko National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
  • I. I. Stuguk National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev

DOI:

https://doi.org/10.20535/RADAP.2009.39.126-130

Keywords:

light-emitting diodes, radioactivity stability semiconductor

Abstract

The ratio determining change of the carrier life time in semi-conductor materials under influence of radiation are received

Author Biographies

  • N. M. Rudenko, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
    Руденко Н.М., к.т.н., доцент кафедри радіоприймання та оброблення сигналів
  • I. I. Stuguk, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
    Стужук І.І., аспірантка радіотехнічного факультету

References

Коган Л.М. Современное состояние полупроводниковых излучающих диодов //Электронные компоненты. — 2000. — №2. — С. 22 - 27.

Никифоров С.Г. Почему светодиоды не всегда работают так, как хотят их производители? // Компоненты и технологии. — 2005. — № 7 — С. 16 – 24.

Bergh A. Dean P. Light-emitting diodes // Clarendon Press. Oxford. — 1976. — 686 p.

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Issue

No. 39 (2009)

Section

Functional Electronics. Micro- and Nanoelectronic Technology

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How to Cite

“Оptical active area light-diodes parameters under influence of radiating radiation” (2009) Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, (39), pp. 126–130. doi:10.20535/RADAP.2009.39.126-130.

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