Impedance model for nanostructures

Authors

  • R. S. Akhmedov National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
  • E. A. Nelin National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev http://orcid.org/0000-0002-8208-9664

DOI:

https://doi.org/10.20535/RADAP.2007.34.102-105

Keywords:

nanoelectronic quantum-mechanical structures, impedance model

Abstract

The application of the impedance model for nanoelectronic quantum-mechanical structures modelling is described. Characteristics illustrating the efficiency of the model are presented.

Author Biographies

  • R. S. Akhmedov, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
    Ахмедов Р.С., магістрант радіотехнічного факультету
  • E. A. Nelin, National Technical University of Ukraine, Kyiv Politechnic Institute, Kiev
    Нелін Є.А., д.т.н., проф. кафедри конструювання та виробництва радіоапаратури

References

Нелин Е.А. Наноэлектронные устройства на основе сверхрешеток // Вестник Киевского политехнического института (радиотехника). 1993. Вип.30. C. 3―15.

Khondker A. N., Khan M. R., Anwar A. F. M. Transmission line analogy of resonance tunneling phenomena: The generalized іmpedance concept // J.Appl.Phys. 1988. V.63, N. 10. P. 5191–5193.

Ando Y., Itoh T. Calculation of transmission tunneling current across arbitrary potential barriers // J.Appl.Phys. 1987. V. 61, N 4. P. 1497―1502.

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Issue

No. 34 (2007)

Section

Functional Electronics. Micro- and Nanoelectronic Technology

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How to Cite

“Impedance model for nanostructures” (2007) Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, (34), pp. 102–105. doi:10.20535/RADAP.2007.34.102-105.

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