The main characteristics of SiGe HBTs at low temperatures
Keywords:SiGe bipolar transistors, low temperatures, temperature of liquid nitrogen
AbstractThe current-voltage curves (CVC) of n-p-n SiGe heterojunction bipolar transistors (HBT) are considered within the temperature range from minus -195˚С up to 25˚С, produced on the SGB25V technology of IHP. The experimental setup, the measurement technique and the connection features of transistors for elimination of the self-excitation are described. The special attention is paid to the temperature dependences of the static base current gain βF in the common-emitter configuration (CEC) and to the output CVC characteristics of transistor in the CEC.
Dvornikov О.V., Tchekhovski V.А., Dziatlau V.L. and Prokopenko N.N.. (2015) Sozdanie nizkotemperaturnykh analogovykh IS dlya obrabotki impul'snykh signalov datchikov. Chast' 1 [The creation of the low-temperature analog ICs for processing the impulse signals of sensors. Part 1]. Sovremennaya elektronika - Modern Electronics, No. 4, pp. 44-49.
Dvornikov О.V., Tchekhovski V.А., Dziatlau V.L. and Prokopenko N.N. (2015) Sozdanie nizkotemperaturnykh analogovykh IS dlya obrabotki impul'snykh signalov datchikov. Chast' 2 [The creation of the low-temperature analog ICs for processing the imulse signals of sensors. Part 2]. Sovremennaya elektronika - Modern electronics, No. 5, pp. 24-29.
Dvornikov О.V., Tchekhovski V.А., Dziatlau V.L. and Prokopenko N.N. (2015) Sozdanie nizkotemperaturnykh analogovykh IS dlya obrabotki impul'snykh signalov datchikov. Chast' 3 [The creation of the low-temperature analog ICs for processing the imulse signals of sensors. Part 3]. Sovremennaya elektronika - Modern electronics,, No. 6, pp. 34-39.
Malyshev I.V., Ionov P.L. and Repin V.V. (2008) Analog-digital microcircuits on the basis of Si-Ge technology – a new direction in a domestic SHF systems engineering. Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings, Moscow, IPPM RAS, pp. 293-296
Teply F. E., Venkitachalam D., Sorge R., Scholz R. F., Heyer H.-V., Ullan M., Diez S. and Faccio F. (2011) Radiation Hardness Evaluation of a 0.25 μm SiGe BiCMOS Technology with LDMOS Module. 2011 12th European Conference on Radiation and Its Effects on Components and Systems, pp. 881-888. DOI: 10.1109/RADECS.2011.6131321.
Cressler J.D. et.al. (2006) SiGe Integrated Electronics for Extreme Environments. 4th International Planetary Probe Workshop, Pasadena, CA.
Cressler J. D. Low-Temperature Electronics. 6 th International Planetary Probe Workshop, Atlanta, Georgia. Short Course on Extreme Environments Technologies 6/08.
Najafizadeh L., Zhu Ch., Krithivasan R., Cressler J., Cui Y., Niu G., Chen S., Ulaganathan Ch., Blalock B. and Joseph A. (2006) SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics. 2006 Bipolar/BiCMOS Circuits and Technology Meeting, pp. 1-4. DOI: 10.1109/BIPOL.2006.311117.
El-Ghanam S.M., Basit W. A. (2011) Performance of electronic switching circuits based on bipolar power transistors at low temperature. Cryogenics, Vol. 51, No. 3, pp. 117-123.
Weinreb S., Bardin J.C. and Mani H. (2007) Design of Cryogenic SiGe Low-Noise Amplifiers. IEEE Trans. on Microwave Theory and Techniques, Vol. 55, No. 11, pp. 2306-2312.
Liang Q., Krithivasan R., Ahmed A., Lu Y., Li Y., Cressler J. D., Niu G., Rieh J.-S., Freeman G., Ahlgren D. and Joseph A. (2006) Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs. Solid-State Electronics, Vol. 50, no. 6, pp. 964–972.
Goryachev M., Galliou S., Abbé P. (2010) Cryogenic transistor measurement and modeling for engineering applications. Cryogenics, Vol. 50, no. 6-7, pp. 381–389. doi:10.1016/j.cryogenics.2010.02.002
Qin G., Jiang N., Ma J., Ma Z., Ma P. and Racanelli M. (2011) Dc characteristics of proton radiated SiGe power HBTs at cryogenic temperature. 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC), pp. 1-2. DOI: 10.1109/EDSSC.2011.6117703
Cressler J. D. ed. (2005) Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy, CRC Press, 871 p.
Dvornikov О. and Shulgevich Yu. (2009) Metody identifikatsii parametrov modelei integral'nykh tranzistorov. Chast' 2. Identifikatsiya parametrov modeli, opisyvayushchikh vol'tampernye kharakteristiki bipolyarnykh tranzistorov [The identification methods of the parameters of integrated transistor models. Part 2. The model parameter identification, describing the current voltage characteristics of BiJFETs]. Sovremennaya elektronika - Modern Electronics, , No. 6, pp. 52–61.
How to Cite
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).