The main characteristics of SiGe HBTs at low temperatures
DOI:
https://doi.org/10.20535/RADAP.2016.66.87-96Keywords:
SiGe bipolar transistors, low temperatures, temperature of liquid nitrogenAbstract
The current-voltage curves (CVC) of n-p-n SiGe heterojunction bipolar transistors (HBT) are considered within the temperature range from minus -195˚С up to 25˚С, produced on the SGB25V technology of IHP. The experimental setup, the measurement technique and the connection features of transistors for elimination of the self-excitation are described. The special attention is paid to the temperature dependences of the static base current gain βF in the common-emitter configuration (CEC) and to the output CVC characteristics of transistor in the CEC.References
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